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| TSM4405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET Lateral PowerTM for Load Switching and PA Switch VDS = - 12V RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 55m RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70m RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90m S S D G Patent Pending Description Bump Side View TSM4405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit. Features Low profile package: less than 0.8mm height when mounted on PCB Occupies only 1.21mm of PCB area 2 Less than 30% of the area of a SC-70 Excellent thermal and electrical capabilities Lead free solder bumps available Block Diagram Ordering Information Part No. TSM4405P Packing Tape & Reel Q'ty 3kpcs / 7" Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation (Steady State) Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit - 12V 8 - 4.9 - 10 1. 5 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance Junction to Balls Thermal Resistance Symbol Rja RjR Limit 85 20 Unit o o C/W C/W TSM4405P 1-6 2003/10 rev. F Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -1.0A VGS = - 2.5V, ID = -1.0A VGS = - 1.8V, ID = -1.0A BVDSS RDS(ON) ----- ----- 0.7 ---- -12 55 70 90 -- 1.0 - 5.0 100 V m Gate Threshold Voltage Zero Gate Voltage Drain Current VDS = VGS, ID = - 250uA VDS =-12V, VGS = 0V Ta=25 C Ta=70 C o o VGS(TH) IDSS ---- V uA Gate Body Leakage VGS = 8V, VDS = 0V IGSS -- nA Dynamic Total Gate Charge VDS = - 6V, ID = - 1.0A, VGS = - 4.5V Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Source-Drain Reverse Recovery Time IS = - 1.0A, VGS = 0V IS = - 1.0A, VGS = 0V, di / dt = 100A / uS IS VSD Trr ----- 0.7.1 40 - 1.0 - 1.2 -A V nS VDS = - 12V, VGS = 0V, f = 1.0MHz Ciss Coss Crss ---800 250 100 ---pF Qg -9.0 -nC Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM4405P 2-6 2003/10 rev. F Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM4405P 3-6 2003/10 rev. F Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM4405P 4-6 2003/10 rev. F Dimensional Outline and Pad Layout O 0.30mm Solder Mask O ~ 0.28mm (Solder Mask Defined Pads) S G S 0.50mm D 0.27mm D = Drain Pad S = Source Pad G = Gate Pad 0.757mm +/-0.03mm SILICON 0.50mm LAND PATTERN RECOMMENDATION 1.15mm +/-0.05mm 0.30mm 1.15mm +/- 0.05mm 0.50mm CXXXX BACKSIDE VIEW (No Bump Side View) Mark on backside of die C = 4405P Product Code XXXX = Lot Traceability Code Mark is located in lower right quadrant on top of Drain pad. Gate pad is located in lower left quadrant. Bump O 0.37mm 0.50mm 0.30mm Bumps are Lead Free solder 96.8 Sn / 2.6 Ag / 0.6 Cu Patents are pending on the product described in the data sheet. Lateral Power TM and MicroSURFTM are trademarks of Great Wall Semiconductor Corporation. TSM4405P 5-6 2003/10 rev. F BGA FET Tape and reel Specification 1. Tape and Reel 1.1. Reel Size: 7 inch diameter. 1.2. Qty / Reel: 3,000pcs 1.3. Peel Strength: 1.3.1. Peel strength must be between 20 to 80 grams. 1.3.2. Minimum peel back length is 150 mm. 1.3.3. Peel back speed must be between 300 +/-5 mm per minute. 1.3.4. Peel back angle must be between 165 to 185 degrees with respect to the component carrier along the longitudinal axis of the carrier tape. 1.3.5 Peel strength test must be performed at the trailer. 1.4. Part Orientation: Marking in upper right quadrant 2. Tape Leader and Trailer Die Size 1.1 mm x 1.1 mm Leader 500 mm Trailer 160 mm 3. Tape Dimension Die Size 1.1 x 1.1 x 0.8 Tape size 8 W1 8.0+0.3 - 0.1 C 1.450.10 D 1.470.10 K 0.910.10 H 0.2540.02 P 4.0 F 4.0 B 1.750.1 TSM4405P 6-6 2003/10 rev. F |
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